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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION *High Collector-Emitter Breakdown VoltageV(BR)CEO= -150V(Min) *Good Linearity of hFE *Complement to Type 2SC2837 APPLICATIONS *For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature -2 A PC 100 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= -25mA ; IB= 0 IC= -5.0A; IB= -0.5A B 2SA1186 MIN -150 TYP. MAX UNIT V -2.0 -100 -100 50 110 60 180 V A A VCB= -150V ; IE=0 VEB= -5V; IC=0 IC= -3A ; VCE= -4V IE= 0 ; VCB= -80V;f= 1.0MHz IE= 1A ; VCE= -12V pF MHz Switching times Turn-on Time Storage Time Fall Time IC= -5A ,RL= 12, IB1= -IB2= -0.5A,VCC= -60V 0.25 0.8 0.2 s s s ton tstg tf hFE Classifications O:50-80 O50 50-60 P:80-130 P80 80-90 Y:130-180 Y130 130-140 Y140 140-150 Y150 150-160 Y160 160-170 Y170 170-180 P90 90-100 P100 100-110 P110 110-120 P120 120-130 O60 60-70 O70 70-80 isc Websitewww.iscsemi.cn 2 |
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